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Third-party-funded project

Growth and characterization of narrow gap heterostructues

Project management at the University of Würzburg:

Participating scientists:

The main goal is to provide numerous projects with narrow gap
semiconductors and heterostructures as well as manganese based
heterostructures. By changing the 2D electron concentration,
e.g., Rashba spin-orbit splitting and the influence of managese
has been investigated. In order to accomplish this, Schottky Gates
were developed and improved.
Also of importance is the improvement of substitional n and p type
doping of epitaxially grown layers as well as n and p type modulation
doping of HgTe/HgCdTe heterostructures and manganese containing
HgTe/HgCdTe heterostructures.

Key words:
    Quantum well
    Modulation doping
    Molecular beam epitaxy

Projekt period: from 01.1995 to 12.2003

Funding institution:
DFG ( SFB 410, dritte Förderperiode )

Preceding project:
SFB 410, zweite Förderperiode


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